SI6435DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Typical Characteristics
30
V_GS = -10V
25
-6.0V
-4.5V
20
-4.0V
15
-3.5V
10
5
-3.0V
0
0
1
2
3
4
5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = -4.5A
V_GS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
16
V_DS= - 5V
12
8
T_A = -55^oC
25^oC
125^oC
4
0
1.5
2
2.5
3
3.5
4
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
V_GS = -4.0V
1.8
1.6
-4.5V
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
5
10
15
20
25
30
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
I_D = -2.3A
0.1
0.08
0.06
0.04
T_A = 25^oC
T_A = 125^oC
0.02
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_GS = 0V
1
0.1
T_A = 125^oC
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6435DQ Rev B(W)