SI6435DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

September 2001
Si6435DQ
30V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Battery protection
• DC/DC conversion
• Power management
• Load switch
Features
• –4.5 A, –30 V RDS(ON) = 40 mΩ @ VGS = –10 V
RDS(ON) = 70 mΩ @ VGS = –4.5 V
• Extended VGSS range (±20V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6435
Si6435DQ
13’’
5
6
7
8
Ratings
–30
± 20
–4.5
–30
1.3
0.6
–55 to +150
87
114
Tape width
16mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si6435DQ Rev B(W)