SI6433DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 20V P-Channel PowerTrench MOSFET

Typical Characteristics
5
I_D = -4.5A
4
V_DS = -5V
-10V
-15V
3
2
1
0
0
4
8
12
16
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
V_GS = -4.5V
0.1 SINGLE PULSE
R_θJA = 133^oC/W
T_A = 25^oC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
C_ISS
f = 1 MHz
V_GS = 0 V
800
C_OSS
400
C_RSS
0
0
5
10
15
20
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R_θJA = 133°C/W
T_A = 25°C
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1000
t₁, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R_θJA(t) = r(t) + R_θJA
R_θJA = 133^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6433DQ Rev C(W)