SI6433DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 20V P-Channel PowerTrench MOSFET

July 2001
Si6433DQ
20V P-Channel PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
• Power management
• Load switch
Features
• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V
RDS(ON) = 65 mΩ @ VGS = –2.5 V
RDS(ON) = 100 mΩ @ VGS = –1.8 V
• RDS(ON) rated for use with 1.8 V logic
• Low gate charge (13nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
Drain–Source Voltage
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6433
Si6433DQ
13’’
5
6
7
8
Ratings
–20
±8
–4.5
–40
1.3
0.6
–55 to +150
87
133
Tape width
16mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si6433DQ Rev C(W)