SI6433DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 20V P-Channel PowerTrench MOSFET

Typical Characteristics
40
V_GS = -4.5V
-3.5V
-3.0V
30
-2.5V
20
-2.0V
10
-1.8V
0
0
1
2
3
4
5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
1.3
I_D = -4.5A
V_GS = - 4.5V
1.2
1.1
1
0.9
0.8
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
20
V_DS = -5V
15
10
T_A = -55^oC
25^oC
125^oC
5
0
0.5
1
1.5
2
2.5
3
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
V_GS = - 2.0V
1.8
1.6
-2.5V
1.4
-3.0V
-3.5V
1.2
-4.0V _-4.5V
1
0.8
0
10
20
30
40
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
I_D = -2.3A
0.12
0.09
0.06
T_A = 25^oC
T_A = 125^oC
0.03
1
2
3
4
5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V_GS = 0V
1
T_A = 125^oC
0.1
0.01
25^oC
0.001
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6433DQ Rev C(W)