SI6426DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

Typical Characteristics
5
I_D = 5.4A
4
3
V_DS = 6V
10V
15V
2
1
0
0
2
4
6
8
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = 4.5V
0.1
SINGLE PULSE
R_θJA = 114^oC/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
400
200
0
0
f = 1MHz
V_GS = 0 V
C_ISS
C_OSS
C_RSS
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R_θJA = 114°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R_θJA(t) = r(t) * R_θJA
R_θJA =114 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6426DQ Rev B(W)