SI6426DQ Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 20 V, VGS = 0 V
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 20 V, VGS = 0 V, TJ=55°C
VGS = 8 V,
VDS = 0 V
VGS = –8 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 5.4 A
VGS = 2.5 V, ID = 4.9 A
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VGS = 4.5 V,
VGS = 2.5 V,
VDS = 10 V,
VDS = 5 V
VDS = 5 V
ID = 5.4 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
trr
Reverse Recovery Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 6 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VGS = 0 V,
IF = 1.5 A,
dIF/dt = 100A/µs
VDS = 6 V,
VGS = 4.5 V
ID = 5.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.25 A (Note 2)
20
14
V
mV/°C
1
µA
5
100 nA
–100 nA
0.6 0.9 1.5
V
–3
mV/°C
23
35
mΩ
33
40
20
A
8
11
S
710
pF
173
pF
84
pF
7
14
ns
17
31
ns
16
29
ns
3
6
ns
14 100
ns
7
10
nC
1.5
nC
1.2
nC
1.25
A
0.7 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 87°C/W when
mounted on a 1in² pad
of 2 oz copper.
2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 114°C/W when mounted
on a minimum pad of 2 oz
copper.
c) Scale 1 : 1 on letter size
paper
Si6426DQ Rev B(W)