SI6426DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

Typical Characteristics
30
V_GS = 4.5V
25
3.5V
3.0V
2.5V
20
15
2.0V
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = 5.4A
V_GS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75
100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
15
V_DS = 5V
10
T_A = -55^oC
25^oC
125^oC
5
0
0.5
1
1.5
2
2.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.6
2.4
2.2 VGS = 2.0V
2
1.8
1.6
2.5V
1.4
3.0V
1.2
1
3.5V
4.0V
4.5V
0.8
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.11
I_D = 2.7A
0.09
0.07
0.05
T_A = 25^oC
0.03
T_A = 125^oC
0.01
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
0.1
0.01
T_A = 125^oC
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6426DQ Rev B(W)