SI4466DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics (continued)
5
I_D= 13A
4
3
2
VDS= 5V
10V
15V
1
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
7000
6000
5000
4000
3000
2000
1000
0
0
Ciss
Coss
Crss
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) Limit
100µs
1ms
10
10ms
100ms
1s
10s
1
DC
0.1
0.01
VGS= 4.5V
SINGLE
PULSE
R_θJA= 125^oC/W
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R_θJA=125^oC/W
TA=25^oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t1
t₂
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si4466DY Rev. A