SI4466DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
50
VGS= 4.5V
2.5V
40
2.0V
3.0V
30
20
10
1.5V
0
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID= 15A
VGS= 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
with Temperature.
50
VDS= 5V
40
TJ= -55^oC
25^oC
125^oC
30
20
10
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2
1.5
VGS= 2.0V
1
2.5V
3.0V
4.5V
0.5
0
10
20
30
40
50
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
0.024
ID= 7.0A
0.018
0.012
0.006
TJ= 125^oC
25^oC
0
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS= 0
10
1
0.1
TJ=125^oC
25^oC
125^oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4466DY Rev. A