SI4466DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
20
ID = 250µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = –12 V, VDS = 0 V
V
29
mV/°C
1
µA
100
nA
–100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
0.4 0.9
ID = 250µA, Referenced to 25°C
-4
1.5
V
mV/°C
VGS = 4.5 V, ID =15 A
VGS = 4.5 V, ID =15 A,
TJ=125°C
VGS = 2.5 V, ID =12 A
VGS = 4.5 V, VDS = 5.0 V
VDS = 5 V, ID = 15 A
0.006 0.0075 Ω
0.009 0.0130
0.008 0.0100
25
A
70
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
4700
pF
850
pF
310
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VDS = 10 V, ID = 15 A,
VGS = 5 V,
20
32
ns
27
44
ns
95
133
ns
35
56
ns
47
66
nC
7
nC
10.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2)
0.65 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θJA is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in²
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in²
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in²
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4466DY Rev. A