SI4450DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

Typical Characteristics (continued)
10
ID=8.0A
8
6
VDS= 12V
24V
48V
4
2
0
0
7
14
21
28
35
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2500
2000
1500
1000
500
0
0
Ciss
Coss
Crss
6
12
18
24
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) Limit
10
1
0.1
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R_θJA=125^oC/W
T =25^oC
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t1
t₂
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal Characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4450DY Rev A