SI4450DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
V
27
mV/°C
1
µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
2 2.5
ID = 250 µA, Referenced to 25°C
-4.5
4
V
mV/°C
VGS = 10 V, ID = 8 A
0.017 0.020 Ω
VGS = 10 V, ID = 8 A, TJ = 125°C
0.027 0.032
VGS = 6 V, ID = 7.5 A
0.019 0.025
VGS = 10 V, VDS = 5 V
25
A
VDS = 5 V, ID = 8 A
28
mS
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
1850
pF
290
pF
100
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = 30 V, ID = 1 A
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 8 A
VGS = 10 V,
13 24
ns
8
16
ns
16 26
ns
32 50
ns
30
42
nC
8.5
nC
5.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
0.74 1.2
V
Notes:
1: R_θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in²
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in²
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4450DY Rev A