SI4450DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

Typical Characteristics
50
VGS =10V
6.0V
40
7.0V
5.0V
4.5V
30
20
4.0
10
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D =8.0A
V_GS =10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
with Temperature
50
VDS = 5V
40
30
TJ = -55^oC
20
25^oC
10
125^oC
0
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2.1
1.8 ^VGS=4.0V
1.5
4.5
5.0V
1.2
6.0V
7.0V
0.9
0.6
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
ID = 4.0A
0.05
0.04
0.03
0.02
0.01
2
TJ = 125^oC
25^oC
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS =0V
10
1
0.1
0.01
TJ =125^oC
25^oC
-55^oC
0.001
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4450DY Rev A