SI4431DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics
10
ID = -7.2A
8
6
VDS = -5V
-10V
-15V
4
2
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = -10V
0.1 ^{SINGLE PULSE}
RθJA = 125^oC/W
TA = 25^oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1500
1200
900
CISS
f = 1 MHz
VGS = 0 V
600
300
COSS
CRSS
0
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) + R_θJA
R_θJA = 125^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4431DY Rev A