SI4431DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

Typical Characteristics
40
VGS = -10.0V
-6.0V _-5.0V
32
-4.5V
24
16
-4.0V
-3.5V
8
-3.0V
0
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
VGS = -3.5V
1.8
-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-7.0V
-8.0V _-9.0V
1
-10.0V
0.8
0
10
20
30
40
-ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -7A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.15
0.12
0.09
0.06
0.03
0
2
ID = -3.6A
TA = 125^oC
TA = 25^oC
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = -5V
25
20
TA = -55^oC
25^oC
125^oC
15
10
5
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125^oC
25^oC
-55^oC
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si4431DY Rev A