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SI4431DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET | |||
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
âBVDSS
âTJ
IDSS
DrainâSource Breakdown Voltage VGS = 0 V, ID = -250 µA
-30
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
-22
Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V
V
mV/°C
-1
µA
IGSSF
GateâBody Leakage, Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR
GateâBody Leakage, Reverse
VGS = -20 V VDS = 0 V
â100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
âVGS(th)
âTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static DrainâSource
OnâResistance
ID(on)
OnâState Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = â250 µA
â1 â1.5 â3
V
ID = â250 µA, Referenced to 25°C
4
mV/°C
VGS = â10 V, ID = â7.0 A
VGS = â4.5 V, ID = â5.5 A
VGS = â10 V, ID = â7.0A, TJ=125°C
0.027 0.032 â¦
0.04 0.05
0.04 0.54
VGS = â10 V, VDS = â5 V
â20
A
VDS = â10 V, ID = â7.0 A
14.5
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = â15 V,
f = 1.0 MHz
V GS = 0 V,
930
pF
278
pF
114
pF
Switching Characteristics
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qgs
GateâSource Charge
Qgd
GateâDrain Charge
(Note 2)
VDD = â15 V,
VGS = â10 V,
ID = â1 A,
RGEN = 6 â¦
VDS = â15 V,
VGS = â10 V
ID = â7.2 A,
12 21
ns
11 20
ns
33 52
ns
13 23
ns
18 29
nC
2.5
nC
4.1
nC
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = â2.1 A (Note 2)
â2.1
A
â0.76 â1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si4431DY Rev A
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