SI4425DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Typical Electrical Characteristics (continued)
10
ID = -11A
8
6
V_DS = -5V
-15V
-10V
4
2
0
0
12
24
36
48
60
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
30
10
RDS(ON) ^LIMIT
3
0.5
0.05
V_GS = -10V
SINGLE PULSE
R_θJA = 125° C/W
T_A = 25° C
100us
1ms
10ms
1s
10^D_s^1C00ms
0.01
0.05 0.1
0.3
1
3
10
- V_DS , DRAIN-SOURCE VOLTAGE (V)
30 50
Figure 9. Maximum Safe Operating Area.
6000
4000
2000
1000
C iss
Coss
500
C rss
200 ^{f = 1 MHz}
V_GS = 0 V
100
0.1 0.2
0.5
1
2
5
10
- V_DS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
R_θJA =125°C/W
T_A = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t1
t₂
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Si4425DYRev.A