SI4425DY Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Electrical Characteristics (T_A = 25 ^OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Min Typ
Max Units
BV_DSS
Drain-Source Breakdown Voltage
∆BV_DSS/∆T_J ^{Breakdown Voltage Temp. Coefficient}
V_GS = 0 V, I _D = -250 µA
I_D = -250 µA, Referenced to 25 ^oC
-30
-22
V
mV/^oC
I_DSS
Zero Gate Voltage Drain Current
V_DS = -24 V, V_GS = 0 V
-1
µA
T_J = 55°C
-10
µA
I_GSSF
Gate - Body Leakage, Forward
V_GS = 20 V, V_DS = 0 V
100
nA
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
V_GS = -20 V, V_DS = 0 V
-100 nA
V_GS(th)
∆V_GS(th)/∆T_J
R_DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
V_DS = V_GS, I_D = -250 µA
I_D = 250 µA, Referenced to 25 ^oC
V_GS = -10 V, I _D = -11 A
-1 -1.7
-3
V
4.3
mV/^oC
0.011 0.014 _Ω
I_D(ON)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
T_J =125°C
0.016 0.023
V_GS = -4.5 V, I _D = -9 A
0.015 0.02
V_GS = -10 V, V_DS = -5 V
-50
A
V_DS = -10 V, I _D = -11 A
32
S
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
V_DS = -15 V, V_GS = 0 V,
f = 1.0 MHz
3000
pF
870
pF
360
pF
t_D(on)
Turn - On Delay Time
V_DS = -15 V, I _D = -1 A
t_r
Turn - On Rise Time
V_GEN = -10 V, R_GEN = 6 Ω
t_D(off)
Turn - Off Delay Time
t_f
Turn - Off Fall Time
Q_g
Total Gate Charge
V_DS = -15 V, I _D = -11 A,
Q_gs
Gate-Source Charge
V_GS = -5 V
Q_gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
12
22
ns
16
27
ns
50
80
ns
100 140
ns
30
42
nC
9
nC
11
nC
I_S
V_SD
Notes:
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = -2.1 A (Note 2)
-2.1
A
-0.72 -1.2
V
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is
guaranteed by design while R_θCA is determined by the user's board design.
a. 50^OC/W on a 1 in² pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 105^OC/W on a 0.04 in²
pad of 2oz copper.
c. 125^OC/W on a 0.006 in² pad
of 2oz copper.
Si4425DY Rev.A