SI4425DY Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Typical Electrical Characteristics
50
V_GS = -10V
-6.0V
40
-4.5V
-3.5V
30
20
-3.0V
10
0
0
0.6
1.2
1.8
2.4
3
- V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D= -11A
1.4
V_GS = -10V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
50
V_DS = -5.0V
40
30
TJ = -55° C
25° C
125° C
20
10
0
1
2
3
4
5
- V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2 ^V GS ^{= -3.5V}
-4.0V
1.5
-4.5 V
-5.5V
-7.0V
1
-10V
0.5
0
10
20
30
40
50
- I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.05
0.04
0.03
0.02
0.01
0
0
I D = -5.5A
TJ = 125° C
25° C
2
4
6
8
10
- V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
V_GS = 0V
10
1
0.1
TJ = 125° C
25° C
-55° C
0.01
0.001
0
0.4
0.8
1.2
- V _SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Si4425DY Rev.A