RFP22N10 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

RFP22N10, RF1S22N10SM
Typical Performance Curves Unless otherwise Specified (Continued)
2.0
I_D = 250µA
1.5
1.0
0.5
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3.0
I_D = 22A, V_GS = 10V
PULSE DURATION = 80µs
2.5 DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.50
V_GS = V_DS, I_D = 250µA
1.25
1.00
0.75
0.50
0.25
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2500
2000
1500
1000
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GS
C_ISS
500
0
0
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
100
75
V_DD = V_DSS
50
GATE
TO
SOURCE
VOLTAGE
R_L = 4.55Ω
I_G(REF) = 1mA
V_GS = 10V
10
7.5
V_DD = V_DSS
5
25
0.75V_DSS
0.50V_DSS
0.25V_DSS
0.75V_DSS
0.50V_DSS
0.25V_DSS
2.5
DRAIN TO SOURCE VOLTAGE
0
I_G(REF)
20 _IG(ACT)
t, TIME (µs)
0
I_G(REF)
80 _IG(ACT)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev. B