RFP22N10 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

RFP22N10, RF1S22N10SM
Typical Performance Curves Unless otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
15
10
5
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I_D MAX (CONTINUOUS)
T_J = MAX RATED
SINGLE PULSE
T_C = 25^oC
10
DC OPERATION
OPERATION IN THIS AREA
MAY BE LIMITED BY r_DS(ON)
1
0.1
1
V_DSS(MAX) = 100V
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
V_GS = 20V
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3 RATED BV_DSS - V_DD)
If R ≠ 0
1 ^{tAV = (L/R)ln[(IAS R)/(1.3 RATED BVDSS - VDD) + 1]}
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
50
V_GS = 10V
40
V_GS = 8V
V_GS = 7V
V_GS = 6V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
20
V_GS = 5V
10
V_GS = 4V
00
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
50
PULSE DURATION = 80µs
V_DS = 15V
DUTY CYCLE = 0.5% MAX.
40
T_C = -55^oC
30
T_C = 175^oC
T_C = 25^oC
20
10
0
0
2
4
6
8
10
V_GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev. B