RFP22N10 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

RFP22N10, RF1S22N10SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFP22N10,
RF1S22N10SMS
100
100
±20
22
50
100
0.67
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BV_DSS I_D = 250µA, V_GS = 0 (Figure 7)
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 9)
I _DSS
I _GSS
r _DS(ON)
t _(ON)
t _d(ON)
t_r
V_DS = 80V, V_GS = 0V
V_DS = 80V, V_GS = 0V, T_C = 150^oC
V_GS = ±20V, V_DS = 0
I_D = 22A, V_GS = 10V (Figure 8)
V_DD = 50Vwwwwwwwww, I_D = 11A,
R_L = 4.5Ω, V_GS = 10V,
R_GS = 25Ω
(Figure 11)
t _d(OFF)
t_f
t _(OFF)
Q_G(TOT) V_GS = 0V to 20V
Q_G(10) V_GS = 0V to 10V
Q_G(TH) V_GS = 0V to 2V
R_θJC
R_θJA TO-220 and TO-263
V_DD = 80V, I_D ≈ 22A,
R_L = 3.64Ω
I_g(REF) = 1mA
(Figure 11)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = 22A
Diode Reverse Recovery Time
t _rr
I_SD = 22A, dI_SD/dt = 100A/µs
NOTE:
2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.
MIN TYP MAX UNITS
100
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
±100 nA
-
-
0.080
Ω
-
-
60
ns
-
13
-
ns
-
24
-
ns
-
65
-
ns
-
18
-
ns
-
-
120
ns
-
-
150
nC
-
-
75
nC
-
-
3.5
nC
-
-
1.5 ^oC/W
-
-
62
o_C/W
MIN TYP MAX UNITS
-
-
1.5
V
-
-
200
ns
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev. B