RFG45N06 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves (Continued)
PULSE DURATION = 250µs, V_GS = 10V, I_D = 45A
2.5
2.0
V_GS = V_DS, I_D = 250µA
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED r_DS(ON) vs JUNCTION
TEMPERATURE
0.0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
2.0
I_D = 250µA
1.5
1.0
0.5
0.0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
4000
V_GS = 0V, f = 1MHz
3000
2000
C_ISS
1000
0
0
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
60
V_DD = BV_DSS
45
10
V_DD = BV_DSS
7.5
30
5.0
0.75 BV_DSS 0.75 BV_DSS
0.50 BV_DSS 0.50 BV_DSS
15
0.25 BV_DSS 0.25 BV_DSS
2.5
R_L = 1.33Ω
I_G(REF) = 1.5mA
V_GS = 10V
0
0
I_G(REF)
20
I_G(ACT)
t, TIME (µs)
I_G(REF)
80
I_G(ACT)
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
3-36