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| RFG45N06 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | |||
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RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
400
TC = +25oC
10
100
100µs
10
1
1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
100ms
VDSS MAX = 60V
DC
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE- OPERATING AREA CURVE
1
0.5
0.2
PDM
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
103
VGS = 20V
TC = +25oC
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

I = I25ï£ï£¬
1----7---5-1---5-â--0--T----C---



VGS = 10V
102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
40
10-3 10-2 10-1
100
101
102
103
104
t, PULSE WIDTH (ms)
FIGURE 4. PEAK CURRENT CAPABILITY
125
PULSE DURATION = 250µs, TC = +25oC
VGS = 10V
100
VGS = 8V
VGS = 7V
75
50
VGS = 6V
25
0
0.0
VGS = 5V
VGS = 4.5V
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
125
PULSE TEST
-55oC
PULSE DURATION = 250µs
100 DUTY CYCLE = 0.5% MAX
75
VDD = 15V
+25oC
+175oC
50
25
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3-35
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