RFD16N03L Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

RFD16N03L, RFD16N03LSM
Typical Performance Curves (Continued)
I_D = 250µA
2.0
2.0
V_GS = V_DS, I_D = 250µA
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0.0
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
PULSE DURATION = 250µs, V_GS = 5V, I_D = 16A
2.0
100
1.5
75
1.0
50
0.5
25
T_J = 25^oC, PULSE DURATION = 250µs
I_D = 32A
I_D = 16A
I_D = 8A
I_D = 2A
0.0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED r_DS(ON) vs JUNCTION
TEMPERATURE
0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 10. TYPICAL r_DS(ON) FOR VARYING CONDITIONS OF
GATE VOLTAGE AND DRAIN CURRENT
V_DD = 15V, I_DD = 16A, R_L = 0.93Ω
250
t_R
200
t_F
150
t_D(ON)
100
t_D(OFF)
50
0
0
10
20
30
40
50
R_GS, GATE-TO-SOURCE RESISTANCE (Ω)
FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF
GATE RESISTANCE
30
V_DD = BV_DSS
24
5
V_DD = BV_DSS
4
18
3
12
0.75
0.50
0.25
BBBVVV_DDDSSSSSS
2
6
RI_GL(R=_EF1₎.8=705.Ω_6mA
1
V_GS = 5V
0
0
I_G(REF)
I_G(REF)
20
I_G(ACT)
t, TIME (s) 80
I_G(ACT)
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
5-34