RFD16N03L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

SEMICONDUCTOR
RFD16N03L,
RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level
Enhancement-Mode Power MOSFETs
Features
Packaging
• 16A, 30V
• r_DS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175^oC Operating Temperature
JEDEC TO-252AA
DRAIN (FLANGE)
Description
The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA 16N03L
RFD16N03LSM
TO-252AA 16N03L
Symbol
GATE
SOURCE
DRAIN
GATE
SOURCE
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.
Formerly developmental type TA49030.
Absolute Maximum Ratings T_C = +25^oC
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Power Dissipation
T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate above +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
RFD16N03L,
RFD16N03LSM
30
30
±10
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to +175
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
5-31
File Number 4013.1