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| RFD16N03L Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs | |||
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Speciï¬cations RFD16N03L, RFD16N03LSM
Electrical Speciï¬cations TC = +25oC, Unless Otherwise Speciï¬ed
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
30
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH) VGS = VDS, ID = 250µA
1
IDSS
VDS = 30V,
TC = +25oC
-
VGS = 0V
TC = +150oC
-
Gate-Source Leakage Current
IGSS
VGS = ±10V
-
On Resistance
rDS(ON) ID = 16A, VGS = 5V
-
Turn-On Time
Turn-On Delay Time
Rise Time
tON
VDD = 15V, ID = 16A,
-
tD(ON)
RL = 0.93â¦, VGS = 5V,
RGS = 5â¦
-
tR
-
Turn-Off Delay Time
tD(OFF)
-
Fall Time
tF
-
Turn-Off Time
tOFF
-
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
QG(TOT) VGS = 0V to 10V VDD = 24V,
-
QG(5)
VGS = 0V to 5V
ID = 16A,
RL = 1.5â¦
-
QG(TH)
VGS = 0V to 1V
-
Input Capacitance
Output Capacitance
CISS
VDS = 25V, VGS = 0V,
-
f = 1MHz
COSS
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction-to-Case
RθJC
-
Thermal Resistance Junction-to-Ambient
RθJA
TO-251 and TO-252
-
TYP
-
-
-
-
-
-
-
15
95
25
27
-
50
30
1.5
1650
575
200
-
-
MAX
-
2
1
50
100
0.022
120
-
-
-
-
80
60
36
1.8
-
-
-
1.65
100
UNITS
V
V
µA
µA
nA
â¦
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
Source-Drain Diode Speciï¬cations
PARAMETERS
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
tRR
TEST CONDITIONS
ISD = 16A
ISD = 16A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
75
ns
5-32
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