HRFZ44N Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

HRFZ44N
Typical Performance Curves (Continued)
1000
V_GS = 10V
100
T_C = 25^oC
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
175 - T_C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
500
T_J = MAX RATED
T_C = 25^oC
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
BV_{DS MAX} = 55V
1ms
10ms
1
1
10
100 200
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
500
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
0.001
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
V_GS = 20V
V_GS = 10V
V_GS = 8V
80
V_GS = 7V
V_GS = 6V
60
40
V_GS = 5V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
60
-55^oC
175^oC
40
20
25^oC
V_DD = 15V
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B