HRFZ44N Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

HRFZ44N
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
55
V
55
V
±20
V
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
49
A
160
A
0.227
A²s
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
120
W
0.8
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
2. Repetitive rating: pulse width limited by maximum junction temperature.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
BV _DSS
I_DSS
I_GSS
I_D = 250µA, V_GS = 0V (Figure 11)
V_DS = 50V, V_GS = 0V
V_DS = 45V, V_GS = 0V, T_C = 150^oC
V_GS = ±20V
V_GS(TH)
r_DS(ON)
V_GS = V_DS, I_D = 250µA (Figure 10)
I_D = 25A, V_GS = 10V (Figure 9)
Thermal Resistance Junction to Case
R_θJC
Thermal Resistance Junction to Ambient
R _{θ JA}
SWITCHING SPECIFICATIONS (V_GS = 10V)
Turn-On Time
t_ON
Turn-On Delay Time
t_d(ON)
Rise Time
t_r
Turn-Off Delay Time
t_d(OFF)
Fall Time
t_f
Turn-Off Time
t_OFF
GATE CHARGE SPECIFICATIONS
(Figure 3)
TO-220
V_DD = 30V, I_D ≅ 25A,
R_L = 1.2Ω, V_GS = 10V,
R_GS = 9.1Ω
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q_g(TOT)
Q_g(10)
Q_g(TH)
Q_gs
Q_gd
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 30V,
I_D ≅ 25A,
R_L = 1.2Ω
I_g(REF) = 1.0mA
(Figure 13)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
0.019 0.022
Ω
-
-
1.25 ^oC/W
-
-
62
o_C/W
-
-
105
ns
-
12
-
ns
-
58
-
ns
-
33
-
ns
-
33
-
ns
-
-
100
ns
-
60
75
nC
-
35
43
nC
-
2.0
2.5
nC
-
4
-
nC
-
14
-
nC
©2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B