HRFZ44N Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

HRFZ44N
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C _RSS
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V _SD
t_rr
Q _RR
TEST CONDITIONS
I_SD = 25A
I_SD = 25A, dI_SD/dt = 100A/µs
I_SD = 25A, dI_SD/dt = 100A/µs
Typical Performance Curves
MIN TYP MAX UNITS
-
1060
-
pF
-
405
-
pF
-
95
-
pF
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
72
ns
-
-
120
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.0110_-5
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
t, RECTANGULAR PULSE DURATION (s)
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10⁰
10¹
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HRFZ44N Rev. B