HP4936DY Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

HP4936DY
Typical Performance Curves Unless Otherwise Specified (Continued)
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
10
T_J = 150^oC
1
0.1
T_J = 25^oC
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
I_D = 5.8A
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
TO SOURCE VOLTAGE
0.4
0.2
0
I_D = 250µA
-0.2
-0.4
-0.6
-0.8
-50
-25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE vs
JUNCTION TEMPERATURE
50
40
30
20
10
0
0.01
0.10
1.00
t, PULSE WIDTH (s)
10.00
FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE
WIDTH
2
1
DUTY CYCLE = 0.5
0.2
P_DM
0.1
0.1
0.05
0.02
0.01
10^-4
SINGLE PULSE
10^-3
10^-2
10^-1
t, RECTANGULAR PULSE DURATION (s)
t₁
t₂
NOTES:
DUTY CYCLE, D = t₁/t₂
T_J = P_D x Z_θJA x R_θJA + T_A
SURFACE MOUNTED
1
10
30
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B