HP4936DY Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

Data Sheet
December 2001
HP4936DY
5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4936DY
SO-8
P4936DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.
Features
• Logic Level Gate Drive
• 5.8A, 30V
• r_DS(ON) = 0.037Ω at I_D = 5.8A, V_GS = 10V
• r_DS(ON) = 0.055Ω at I_D = 4.7A, V_GS = 4.5V
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
SO-8
©2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B