HP4936DY Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

HP4936DY
Typical Performance Curves Unless Otherwise Specified
30
V_GS = 10, 9, 8, 7, 6, 5V
24
4V
18
12
6
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
3V
2, 1V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
24 ^{TA = -55oC}
18
25^oC
125^oC
12
6
0
0
1
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 2. TRANSFER CHARACTERISTICS
0.10
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
0.08
0.06
0.04
V_GS = 4.5V
0.02
V_GS = 10V
0
0
6
12
18
24
30
36
I_D, DRAIN CURRENT (A)
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
10
8
V_DS = 15V
I_D = 5.8A
6
4
2
0
0
4
8
12
16
20
Q_g, GATE CHARGE (nC)
FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
1250
1000
750
500
C_ISS
C_OSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS = C_DS + C_GD
250
C_RSS
0
0
6
12
18
24
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.00
PULSE DURATION = 80µs
DUTY CYCLE = 0.8% MAX
1.75
V_GS = 10V
I_D = 5.8A
1.50
1.25
1.00
0.75
0.5
-50 -25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
HP4936DY Rev. B