HP4410DY Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

HP4410DY
Typical Performance Curves Unless Otherwise Specified (Continued)
50
0.10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.08
T_J = 150^oC
T_J = 25^oC
10
0.06
0.04
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I_D = 10A
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE TO SOURCE VOLTAGE
0.4
0.2
0.0
I_D = 250µA
-0.2
-0.4
-0.6
-0.8
-50
-25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE
vs JUNCTION TEMPERATURE
80
60
40
20
0
0.01
0.10
1.00
t, PULSE WIDTH (s)
10.00
FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE
WIDTH
2
1
DUTY CYCLE = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
P_DM
SINGLE PULSE
10^-3
10^-2
10^-1
t, RECTANGULAR PULSE DURATION (s)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
T_J = P_D x Z_θJA x R_θJA + T_A
SURFACE MOUNTED
1
10
30
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
HP4410DY Rev. B