HP4410DY Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

HP4410DY
Typical Performance Curves Unless Otherwise Specified
50
V_GS = 10V - 5V
4V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
3V
20
10
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
30
20
10
T_A = 125^oC
-55^oC
25^oC
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 2. TRANSFER CHARACTERISTICS
0.030
PULSE DURATION = 80µs
0.025 ^{DUTY CYCLE = 0.5% MAX}
0.020
0.015
V_GS = 4.5V
0.010
0.005
V_GS = 10V
0
0
10
20
30
40
50
I_D, DRAIN CURRENT (A)
FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4200
3500
2800
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS = C_DS + C_GD
2100
1400
700
C_RSS
C_OSS
C_ISS
0
0
6
12
18
24
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VP_DU_SL=SE15DVURATION = 80µs
I_D^{DU=T1Y0ACYCLE = 0.5% MAX}
8
6
4
2
0
0
9
18
27
36
45
Q_g, GATE CHARGE (nC)
FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE
2.0
PVUGLSS=E1D0UVRATION = 80µs
DI_DUT=Y10CAYCLE = 0.5% MAX
1.5
1.0
0.5
0
-50 -25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HP4410DY Rev. B