H11D1SR2M Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – High Voltage Phototransistor Optocouplers

DC Electrical Characteristics (Continued) (T_A = 25°C unless otherwise specified.)
Isolation Characteristics
Symbol
Characteristic Test Conditions Device Min. Typ.*
V_ISO
R_ISO
C_ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
f = 60Hz, t = 1 sec.
V_I-O = 500 VDC
f = 1MHz
All
7500
All
10¹¹
All
0.2
*All Typical values at T_A = 25°C
Max.
Units
V_ACPEAK
Ω
pF
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
CTI
V_PR
V_IORM
V_IOTM
RIO
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V_IORM x 1.875 = V_PR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V_IORM x 1.5 = V_PR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V_IO = 500V
Min.
175
1594
1275
850
6000
7
7
0.5
10⁹
Typ.
Max.
I-IV
I-IV
55/100/21
2
Unit
V_peak
V_peak
V_peak
V_peak
mm
mm
mm
Ω
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
4
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