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| H11D1SR2M Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – High Voltage Phototransistor Optocouplers | |||
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
TOTAL DEVICE
TSTG Storage Temperature
All
TOPR Operating Temperature
All
TSOL Lead Solder Temperature (Wave Solder)
All
PD
Total Device Power Dissipation @ TA = 25°C
All
Derate Above 25°C
EMITTER
IF
Forward DC Current(1)
All
VR
Reverse Input Voltage(1)
All
IF(pk) Forward Current â Peak (1µs pulse, 300pps)(1)
All
PD
LED Power Dissipation @ TA = 25°C(1)
All
Derate Above 25°C
DETECTOR
PD
VCER
Power Dissipation @ TA = 25°C
Derate linearly above 25°C
Collector to Emitter Voltage(1)
All
MOC8204M
H11D1M, H11D2M
H11D3M
VCBO
Collector Base Voltage(1)
4N38M
MOC8204M
H11D1M, H11D2M
H11D3M
VECO
Emitter to Collector Voltage(1)
4N38M
H11D1M, H11D2M,
H11D3M,
MOC8204M
IC
Collector Current (Continuous)
All
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Value
-40 to +150
-40 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
300
4.0
400
300
200
80
400
300
200
80
7
100
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mW
mW/°C
V
V
V
mA
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
2
www.fairchildsemi.com
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