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| H11D1SR2M Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – High Voltage Phototransistor Optocouplers | |||
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Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol Characteristic
Test Conditions
Device
EMITTER
VF
Forward Voltage(2)
IF = 10mA
All
âVF Forward Voltage
All
âTA Temp. Coefï¬cient
BVR Reverse Breakdown IR = 10µA
All
Voltage
CJ
Junction Capacitance VF = 0V, f = 1MHz
All
VF = 1V, f = 1MHz
IR
Reverse Leakage
VR = 6V
All
Current (2)
DETECTOR
BVCER Breakdown Voltage
RBE = 1Mâ¦, IC = 1.0mA, IF = 0 MOC8204M
Collector to Emitter(2)
H11D1M/2M
H11D3M
BV CEO
BV CBO
Collector to Base(2)
No RBE, IC = 1.0mA
IC = 100µA, IF = 0
4N38M
MOC8204M
H11D1M/2M
H11D3M
4N38M
BV EBO
BV ECO
ICER
ICEO
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter(2)
(RBE = 1Mâ¦)
IE = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 300V, IF = 0, TA = 25°C
VCE = 300V, IF = 0, TA = 100°C
VCE = 200V, IF = 0, TA = 25°C
VCE = 200V, IF = 0, TA = 100°C
VCE = 100V, IF = 0, TA = 25°C
VCE = 100V, IF = 0, TA = 100°C
No RBE, VCE = 60V, IF = 0,
TA = 25°C
4N38M
All
MOC8204M
H11D1M/2M
H11D3M
4N38M
Min.
6
400
300
200
80
400
300
200
80
7
7
Typ.* Max. Unit
1.15
1.5
V
-1.8
mV/°C
25
V
50
pF
65
pF
0.05
10
µA
V
V
V
10
V
100 nA
250 µA
100 nA
250 µA
100 nA
250 µA
50
nA
Transfer Characteristics (TA = 25°C Unless otherwise speciï¬ed.)
Symbol Characteristics Test Conditions
Device
EMITTER
CTR
V CE(SAT)
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage(2)
SWITCHING TIMES
IF = 10mA, VCE = 10V,
RBE = 1Mâ¦
IF = 10mA, VCE = 10V
IF = 10mA, IC = 0.5mA,
RBE = 1Mâ¦
IF = 20mA, IC = 4mA
H11D1M/2M/3M,
MOC8204M
4N38M
H11D1M/2M/3M,
MOC8204M
4N38M
tON
Non-Saturated
VCE = 10V, ICE = 2mA,
All
Turn-on Time
RL = 100â¦
tOFF Turn-off Time
All
*All Typical values at TA = 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
3
Min. Typ.* Max. Units
2 (20)
2 (20)
0.1
mA (%)
0.40
V
1.0
5
µs
5
µs
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