FQU8P10TU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -100 V, -6.6 A, 530 mΩ

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1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = -250 μ A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R _DS(on)
100 s
1 ms
10 ms
DC
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
-V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = -10 V
2. I_D = -3.3 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0.5
10⁰
0 .2
0 .1
0 .0 5
1 0 ^-1
0 .0 2
0 .0 1
sing le p ulse
※ N o te s :
1.
Z
θ
JC^{( t)}
=
2.8 4 ℃ /W
M ax.
2 . D uty F a ctor, D = t₁/t₂
3.
T _JM
-
T_C
=
P _DM
*
Z
θ
JC^{( t)}
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
4
FQD8P10 / FQU8P10 Rev. C2
www.fairchildsemi.com