FQU8P10TU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -100 V, -6.6 A, 530 mΩ

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Top :
10¹
V_GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
10⁰ Bottom : -4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
1.2
V_GS = - 10V
0.9
V_GS = - 20V
0.6
0.3
※ Note : T_J = 25℃
0.0
0
5
10
15
20
25
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10^-1
C_oss
C_iss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = -40V
2. 250μ s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = -20V
V_DS = -50V
8
V_DS = -80V
6
4
2
※ Note : I_D = -8.0 A
0
0
2
4
6
8
10
12
14
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2010 Fairchild Semiconductor Corporation
3
FQD8P10 / FQU8P10 Rev. C2
www.fairchildsemi.com