FQU2N100TU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V_GS = 0 V
2. I_D = 250µA
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
10¹
is Limited by R _DS(on)
100 µs ^{10 µs}
1 ms
10⁰
10 ms
DC
10^-1
10^-2
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 0.8 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.5
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
10⁰
0 .2
1 0 ^-1
0 .1
0 .05
0 .02
0 .01
1 0 ^-2
1 0 ^-5
sin g le p u lse
※ N otes :
1 . Z _{θ JC}(t) = 2 .5 ℃ /W M a x .
2. D uty F a ctor, D =t₁/t₂
3 . T _JM - T _C = P _{D M} * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
4
FQD2N100 / FQU2N100 Rev. C0
www.fairchildsemi.com