FQU2N100TU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

FQD2N100 / FQU2N100
N-Channel QFET^® MOSFET
1000 V, 1.6 A, 9 Ω
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 1.6 A, 1000 V, R_DS(on) = 9 Ω (Max.)@ V_GS = 10 V,
I_D = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD2N100TM / FQU2N100TU
1000
1.6
1.0
6.4
± 30
160
1.6
5.0
5.5
2.5
50
0.4
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (* 1 in² pad of 2 oz copper), Max.
FQD2N100TM
FQU2N100TU
2.5
110
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
o_C/W
©2004 Fairchild Semiconductor Corporation
1
FQD2N100 / FQU2N100 Rev. C0
www.fairchildsemi.com