FQU2N100TU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

Typical Characteristics
Top :
15V.0^GSV
10.0 V
8.0 V
7.0 V
6.5 V
10⁰
Bottom :
6.0 V
5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250µs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
20
15
V_GS = 10V
10
5
V_GS = 20V
※ Note : T_J = 25℃
0
0
1
2
3
4
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10^-1
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = 50V
2. 250µs Pulse Test
4
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
V_DS = 200V
10
V_DS = 500V
8
V_DS = 1000V
6
4
2
※ Note : I_D = 1.6 A
0
0
2
4
6
8
10
12
14
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
3
FQD2N100 / FQU2N100 Rev. C0
www.fairchildsemi.com