FQU1N60CTU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VI_DG=S =2500V_μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
10¹
10⁰
10^-1
10^-2
10⁰
Operation in This Area
is Limited by R _DS(on)
100 μs
1 ms
10 ms
100 ms
DC
※ Notes :
1. T_C = 25 ^oC
2.
3.
TS_Jin=gl1e5P0u^o_lCse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
VI_DG=S
= 10 V
0.5 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
10⁰
0 .2
0 .1
0 .0 5
1 0 ^-1
0 .0 2
0 .0 1
single puls e
※ N otes :
1.
2.
3.
Z
D
T
θ_u J_tC_y(
JM ^-
t) = 4.53 ℃ /W M
Fa
T_C
ct
=
or,
P_D
M^{D*=Zt 1}θ^/
t
2
JC
(
t
a
)
x
.
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
4
FQD1N60C / FQU1N60C Rev. C1
www.fairchildsemi.com