FQU1N60CTU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Package Marking and Ordering Information
Device Marking
FQD1N60C
FQU1N60C
Device
FQD1N60CTM
FQU1N60CTU
Package
D-PAK
I-PAK
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics T_C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 μA
600
ΔBV_{DSS Breakdown Voltage Temperature}
/ ΔT_J Coefficient
I_D = 250 μA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 600 V, V_GS = 0 V
V_DS = 480 V, T_C = 125°C
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 30 V, V_DS = 0 V
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -30 V, V_DS = 0 V
--
On Characteristics
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 250 μA
2.0
R_DS(on)
Static Drain-Source
On-Resistance
V_GS = 10 V, I_D = 0.5 A
--
g_FS
Forward Transconductance
V_DS = 40 V, I_D = 0.5 A
--
Dynamic Characteristics
C_iss
C_oss
Input Capacitance
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
--
C_rss
Reverse Transfer Capacitance
--
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DD = 300 V, I_D = 1.1 A,
R_G = 25 Ω
V_DS = 480 V, I_D = 1.1 A,
V_GS = 10 V
--
--
--
(Note 4)
--
--
--
(Note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
--
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
--
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 0.5 A
--
t_rr
Reverse Recovery Time
V_GS = 0 V, I_S = 1.1 A,
--
Q_rr
Reverse Recovery Charge
dI_F / dt = 100 A/μs
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 59 mH, I_AS = 1.1 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 1.1 A, di/dt ≤ 200 A/μs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially independent of operating temperature.
Typ
--
0.6
--
--
--
--
--
2.8
3.5
130
19
3.5
7
21
13
27
4.8
0.7
2.7
--
--
--
190
0.53
Max Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
V
3.4
Ω
--
S
170
pF
25
pF
4.5
pF
24
ns
52
ns
36
ns
64
ns
6.2
nC
--
nC
--
nC
1
A
4
A
1.4
V
--
ns
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQD1N60C / FQU1N60C Rev. C1
www.fairchildsemi.com