FQU1N60CTU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Typical Performance Characteristics
Figure 1. On-Region Characteristics
10¹
Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10⁰
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
12
10
8
6
V_GS = 10V
4
V_GS = 20V
2
※ Note : T_J = 25℃
0
0
1
2
3
4
5
6
7
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
800
700
600
500
400
300
200
100
0
10^-1
C_oss
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_rss
※ Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
2
150^oC
25^oC
-55^oC
※ Notes :
1. V_DS = 40V
2. 250μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 120V
8
V_DS = 300V
V_DS = 480V
6
4
2
※ Note : I_D = 10A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
©2003 Fairchild Semiconductor Corporation
3
FQD1N60C / FQU1N60C Rev. C1
www.fairchildsemi.com