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FQT1N80TFWS Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
œ Notes :
1. VGS = 0 V
2. ID =250µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
100
10-1
10-2
10-3
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
1s
DC
œ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
œ Notes :
1. V =10V
GS
2. ID = 0.1 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
25
50
75
100
125
150
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
102
D =0.5
101
0 .2
0 .1
0 .0 5
0 .0 2
100 0.01
s in g le p u lse
œ N otes :
1 . Z θ J C( t) = 6 0  / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
FQT1N80 Rev. A
4
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