FQT1N80TFWS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET

FQT1N80
N-Channel MOSFET
800V, 0.2A, 20Ω
Features
• R_DS(on) = 15.5Ω (Typ.)@ V_GS = 10V, I_D = 0.1A
• Low gate charge ( Typ. 5.5nC)
• Low Crss ( Typ. 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
S
G _SOT-223
FQT Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQT1N80
800
±30
0.2
0.12
0.8
90
0.2
0.2
4.0
2.1
0.02
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient*
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
Max.
60
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FQT1N80 Rev. A
www.fairchildsemi.com