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FQT1N80TFWS Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel MOSFET
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FQT1N80
Device
FQT1N80
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
800
ID = 250µA, Referenced to 25oC
-
VDS = 800V, VGS = 0V
-
VDS = 640V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.1A
VDS = 40V, ID = 0.1A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 640V, ID = 1A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400V, ID = 1A
RG = 25Ω
-
-
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 0.2A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 1A
dIF/dt = 100A/µs
-
-
-
-
(Note 4)
-
Typ.
-
0.8
-
-
-
-
15.5
0.75
150
20
2.7
5.5
1.1
3.3
10
25
15
25
-
-
-
300
0.6
Max. Units
-
-
25
250
±100
V
V/oC
µA
nA
5.0
V
20
Ω
-
S
195 pF
30
pF
5.0
pF
7.2
nC
-
nC
-
nC
30
ns
60
ns
40
ns
60
ns
0.2
A
0.8
A
1.4
V
-
ns
-
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQT1N80 Rev. A
2
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